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IOE Lithography光刻机

URE-2000 series double-sided lithography machine

添加时间:2024-06-21 18:26:31

The main technical indicators of single-light source double-sided lithography machine

Light source: 350W, 500W, 1000 W mercury lamp or LED (according to user needs).

Exposure area: 110mmx110mm~160mmx160 mm or customized according to user needs

Illumination non-uniformity: 2.3% (110mmx110 mm); 3.5%(150 mmx150 mm)

Alignment:Bottom face alignment (double-sided)   Microscope alignment (single-sided)

Overlay accuracy: 0.8 μm ± on one side, 2.5 μm ± double-sided

Resolution: 0.8 μm~1.2 μm

Sample movement stroke relative to mask: X: ±5 mm; Y:±5 mm; θ:±6°

Substrate size: 50mm~150mmx150mm or customized according to user needs

Mask size (inches): 2.5, 3, 4, 5, 6, 7 or customized according to user needs

Maximum gel thickness (SU8 gel): 600 μm

Exposure line sidewall steepness: ≥86°

 

The main technical indicators of dual-light source double-sided lithography machine

Light source: mercury lamp or LED light source

Exposure area: 110 mmx110 mm-160 mmx160 mm

Alignment method: dual lens + dual CCD video image alignment

Workpiece table adjustment stroke: X:±6.5 mm; Y:±6.5 mm; θ:±6°

Substrate size: 2-6 inches

Mask size: 3-7 inches

Lithography resolution: 1 μm

Alignment accuracy: ±0.6μm (single-sided), ±2μm (double-sided)

Yield: 150 pieces/hour

 

Technical features:

 Combined with the advanced CCD image bottom alignment technology, the overall design idea of using a single exposure head or a double exposure head to achieve double-facing alignment exposure, the structure is novel, the performance of the whole machine is superior, and the exposure operation is intuitive and convenient.

 The use of 350W or 1 000W mercury lamp or LED uniform rain intensity illumination technology greatly shortens the exposure time, which is very beneficial for depth lithography.

 The novel high-precision, multi-degree-of-freedom mask-sample precision alignment workpiece table structure design greatly improves the alignment degree and speed of the mask-sample.

The specially improved sidewall steepness enhancement technology and the diffraction smoothing technology have significantly improved the exposure quality.